Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses

Hafnium oxide non-volatile memories have shown promise as an artificial synapse in neuromorphic computing architectures. However, there is still a need to fundamentally understand how reliably control the analog resistance change induced by oxygen ions that partially rupture or re-form conductive filament. In this work, impact of measurement conditions (pulse amplitude and pulse width) titanium dopants on atomic layer deposited hafnium memristor synapses are studied. A lower improves linearity function number pulses but results smaller memory window. The addition does not substantively modulation oxide. Density functional theory calculations show strongly impacts ion motion HfxTiyOz matrix significantly HfTi metallic This study demonstrates characteristic largely independent doped bulk since primarily controlled conducting